inchange semiconductor isc product specification isc silicon pnp power transistor 2SB946A description low collector saturation voltage- : v ce(sat) = -0.5v(max)@i c = -5a good linearity of h fe large collector current i c complement to type 2sd1271a applications designed for power switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -150 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -7 v i c collector current-continuous -7 a i cm collector current-peak -15 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB946A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -10ma ; i b = 0 -100 v v ce (sat) collector-emitter saturation voltage i c = -5a; i b = -0.25a b -0.5 v v be (sat) base-emitter saturation voltage i c = -5a; i b = -0.25a b -1.5 v i cbo collector cutoff current v cb = -100v ; i e = 0 -10 a i ebo emitter cutoff current v eb = -5v ; i c =0 -50 a h fe-1 dc current gain i c = -0.1a ; v ce = -2v 45 h fe-2 dc current gain i c = -3a ; v ce = -2v 60 260 f t current-gain?bandwidth product i c =-0.5a; v ce = -10v; f test =10mhz 30 mhz switching times t on turn-on time 0.5 s t stg storage time 1.5 s t f fall time i c = -3.0a ,i b1 = -i b2 = -0.3a, 0.1 s ? h fe- 2 classifications r q p 60-120 90-180 130-260 isc website www.iscsemi.cn 2
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